| PART |
Description |
Maker |
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| AM42DL1612DT70IS AM42DL1622DB30IT DL164 DL163 |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
|
Advanced Micro Devices, Inc.
http://
|
| M420000004 M420000006 M420000007 M42000000I M42000 |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| AM41DL6408G AM41DL6408G70IS AM41DL6408G70IT AM41DL |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
SPANSION[SPANSION]
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM
(M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
RENESAS[Renesas Electronics Corporation]
|
| M5M5V216ATP M5M5V216ART D98013_A M5M5V216ATP-55LW |
2097152-bit CMOS static RAM
From old datasheet system
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AM49DL640BG |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 32 Mbit (512K x 16-Bit) Pseudo Static RAM (Preliminary)
From old datasheet system
|
AMD Inc
|
| AM50DL128CG |
2 x 64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 64 Mbit (2 M x 16-Bit) Pseudo Static RAM (Preliminar
From old datasheet system
|
AMD Inc
|
| TC55257DFL-55L TC55257DFL-55V TC55257DFL-70L TC552 |
32K X 8 STANDARD SRAM, 120 ns, PDSO28
MOS DIGITAL INTEGRATED CIRCUIT 马鞍山数字集成电
32,768 WORD-8 BIT STATIC RAM 32,768字，8位静态RAM
32,768-WORD BY 8-BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
